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Название: Stress and Strain Engineering at Nanoscale in Semiconductor Devices
Автор: Chinmay K. Maiti
Издательство: CRC Press
Год: 2021
Формат: PDF
Страниц: 275
Размер: 37,69 MB
Язык: English
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices.