Название: Fundamentals of RF and Microwave Transistor Amplifiers
Автор: Inder J. Bahl
Издательство: Wiley
Год: 2009
Страниц: 678
ISBN: 9780470391662, 9780470462348
Формат: PDF
Размер: 15.4 Мб
Язык: English
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers
This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations.
Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions.
With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Contents in Brief
1. Introduction 1
2. Linear Network Analysis 17
3. Amplifier Characteristics and Definitions 33
4. Transistors 61
5. Transistor Models 91
6. Matching Network Components 125
7. Impedance Matching Techniques 149
8. Amplifier Classes and Analyses 185
9. Amplifier Design Methods 211
10. High-Efficiency Amplifier Techniques 259
11. Broadband Amplifier Techniques 295
12. Linearization Techniques 331
13. High-Voltage Power Amplifier Design 363
14. Hybrid Amplifiers 399
15. Monolithic Amplifiers 419
16. Thermal Design 453
17. Stability Analysis 479
18. Biasing Networks 507
19. Power Combining 527
20. Integrated Function Amplifiers 557
21. Amplifier Packages 585
22. Transistor and Amplifier Measurements 613