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Автор: Sudeb Dasgupta and Brajesh Kumar Kaushik
Издательство: CRC Press
Год: 2017
Формат: PDF
Размер: 4 Мб
Язык: английский / English
This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
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