Название: Wide Bandgap Semiconductor Electronics and DevicesАвтор: Uttam Singisetti, Towhidur Razzak
Издательство: World Scientific Publishing
Серия: Selected Topics in Electronics and Systems
Год: 2020
Страниц: 260
Язык: английский
Формат: pdf (true), epub
Размер: 29.5 MB, 16.8 MB
With the dawn of Gallium Oxide (Ga2O) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.
Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.
This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O and diamond.
Gallium Nitride high electron mobility transistors (HEMTs) are currently the mainstream RF technology of choice for discrete and MMIC-based high-power, high-frequency power amplifiers in a range of applications ranging from radars, CATVs, and satellite communications, to wireless broadband in the 4G and the up-and-coming 5G spectrums. Despite the stellar performance of GaN devices on silicon carbide (SiC) substrates, the inherently high cost of this technology due to the limited areas and high starting substrate costs, have spurred the development of GaN devices on alternate, more inexpensive substrates in order to achieve cost-competitiveness with existing Si LDMOS technology for sub-3.6 GHz power amplifiers and for future applications at higher frequency bands.
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