Название: RF and Time-domain Techniques for Evaluating Novel Semiconductor TransistorsАвтор: Keith A. Jenkins
Издательство: Springer
Год: 2022
Страниц: 173
Язык: английский
Формат: pdf (true)
Размер: 10.17 MB
This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.
The unrelenting demand for faster and more powerful computing and communication in smaller devices and computers has led to a many decades-long continuous improvement in the transistors, mostly field-effect transistors (FETs) which are the building blocks of computers. Much of the progress has been achieved by reducing the size of the FETs, which has been accomplished by the methods known as “scaling.” However, the prospect of continued scaling has diminished in the last few years, and since the demand for performance is continuing to increase, there is considerable interest in finding other ways to improve transistor speed, and, if possible, to do so without requiring a drastic increase in power consumption.
This has led to many interesting proposed replacements of conventional transistors, by significantly modifying their structures, or by replacing them entirely with devices made of new materials. With all of these proposed replacements comes the important task of evaluating their performance: in additional to measuring DC currents and voltages, it is incumbent on their inventors to demonstrate that they switch or amplify quickly, are reliable, don’t degrade with time, have predictable performance have measurable at-speed characteristics, can be represented in an equivalent circuit model which can be used for circuit design.
This book is concerned with presenting ways to examine these performance questions, to go beyond DC measurements to measure dynamic effects. Drawing from common knowledge, published literature, and from the author’s own investigations, it describes a number of measurement techniques which can be applied to novel devices. It covers frequency-domain and time-domain operation, and small-signal and large-signal operation. It describes some well-established measurement methods, as well as a number of novel techniques which have been developed as a result of innovation in transistor structure. The book could be described as presenting ABDC techniques: Anything But DC.
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