Название: Carrier Transport in Nanoscale MOS TransistorsАвтор: Hideaki Tsuchiya, Yoshinari Kamakura
Издательство: Wiley
Год: 2017
ISBN: 9781118871713
Формат: pdf
Страниц: 248
Размер: 10,6 mb
Язык: English
The device scaling concept, which can lead to increase in both switching speed and integrated density of MOSFETs with reasonable power consumption, has been the main guiding principle of the integrated device engineering over the past 40 years.
This book was written for graduate students, engineers and scientists who are engaged in work on nanoscale electronic devices, and was designed to provide a deeper understanding of physical aspects of carrier transport in real electronic devices. Familiarity with quantum mechanics, basic semiconductor physics and electronics is assumed. After working through this book, students should be prepared to follow current device research, and to actively participate in developing future devices.
• Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport
• Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations
• The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds