Название: Silicon Nanodevices
Автор: Editors: Henry H. Radamson, Guilei Wang
Издательство: MDPI
Год: 2022
Страниц: 240
Размер: 52.59 МБ
Формат: PDF
Язык: English
Nanodevices have attracted great attention in recent years due to their low power consumption and fast operation in electronics and photonics as well as high sensitivity in sensor applications. As an example, in following Moore’s law, the CMOS has undergone an evolution in design and architecture in integrated circuits. In principle, scaling down of the device structure can be performed by using advanced processing, but there are always different issues, e.g., concerning contact resistance, defects, and reliability, which can affect device performance.
The current technology developments drive nanodevices towards 3D integration, and the merging of electronics and photonics is inevitable. Such designs will be the ultimate goal of nanotechnology in the future. Therefore, this Special Issue will focus on the following scientific fields:
Fabrication and characterization of group IV nanostructures, nanodevices, and nanosensors
Carrier transport in nanodevices
Optoelectronic materials and nanodevices using Si-based heterostructures and nanostructures
Integration of photonics with Si CMOS technology
Strain bandgap engineering and carrier transport in CMOS
Si-based optical modulators, switches, and detectors
Si-based waveguide technology and nanodevices
Luminescence in Si-based materials
Integrated waveguide sensing
Nanomaterials for life science applications
Nanoscale biosensors
Defect engineering and characterization
This Special Issue creates unique knowledge for the readers in nanoscale physics, device processing, and material properties.