Название: Emerging Applications of Low Dimensional MagnetsАвтор: Ram K. Gupta, Sanjay Mishra, Tuan Anh Nguyen
Издательство: CRC Press
Год: 2023
Страниц: 335
Язык: английский
Формат: pdf (true)
Размер: 25.9 MB
Low-dimensional magnetic materials find their wide applications in many areas, including spintronics, memory devices, catalysis, biomedical, sensors, electromagnetic shielding, aerospace, and energy. This book provides a comprehensive discussion on magnetic nanomaterials for emerging applications.
Fundamentals along with applications of low-dimensional magnetic materials in spintronics, catalysis, memory, biomedicals, toxic waste removal, aerospace, telecommunications, batteries, supercapacitors, flexible electronics, and many more are covered in detail to provide a full spectrum of their advanced applications.
The scaling of Complementary Metal Oxide Semiconductor (CMOS) technology leads to an increase in leakage current and static power dissipation in memories and logic-based circuits. This limits the miniaturization of CMOS-based electronic devices. So, there is a need to replace these conventional charge-based electronic devices with some novel technologies. Spintronics is an emerging feld that has the potential to replace mainstream electronics. Spintronics is a feld where the spin of an electron is used to manipulate the data. Spintronics has developed into a key research area. The spin devices show better performance in many aspects. These devices use minimal power, have a fast response time, high density, scalability, and are non-volatile. Spin-based devices can be utilized in various memory and logic applications due to their potential advantages over conventional CMOS devices. MTJ is one of the major developments in the feld of spintronics which is based on the Tunnel Magnetoresistance (TMR) effect. One of the most signifcant applications of MTJ is the MRAM in which MTJ is employed as a fundamental memory element. MRAM combines the advantages of SRAM, DRAM, and fash memory i.e., high speed, high density, and non-volatility respectively. Therefore, MRAM has the potential to replace conventional memory technologies and become universal memory.
This book offers fresh aspects of nanomagnetic materials and innovative directions to scientists, researchers, and students. It will be of particular interest to materials scientists, engineers, physicists, chemists, and researchers in electronic and spintronic industries, and is suitable as a textbook for undergraduate and graduate studies.
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