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Название: Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics
Автор: Edited by V. Dierolf, I.T. Ferguson, J.M. Zavada
Издательство: Woodhead Publishing
Год: 2016
Формат: PDF
Страниц: 452
Для сайта: litgu.ru
Размер: 32.04 МБ
Язык: English
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge.
This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures.